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| 2SK2908-01L,S FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 600V 1,2 9A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AV PD T ch T stg Rating 600 9 32 35 9 144.4 60 150 -55 ~ +150 L=3.27mH,Vcc=60V Unit V A A V V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I DSS I GSS R DS(on) g C C C t t t t I V t Q fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V Tch=25C VGS=0V Tch=125C VGS=35V VDS=0V ID=4,5A VGS=10V VGS=10V ID=4,5A ID=4,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V VGS=10V ID=9A RGS=10 Tch=25C L = 3,27mH IF=2 X IDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 600 3,5 Typ. 4,0 10 0,2 10 1,0 1,0 5 900 150 70 25 70 60 35 1,0 550 7,0 Max. 4,5 500 1,0 100 1,2 1,2 1400 230 110 40 110 90 60 1,50 2,5 9 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 2,08 75,0 Unit C/W C/W N-channel MOS-FET 600V 2SK2908-01L,S FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=4,5A; VGS=10V 1,2 9A 60W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [m] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=9A; TC=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test;VGS=0V C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch Eas=f(starting Tch): VCC=60V; IAV 9A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance EAV [mJ] 10 ID [A] 12 Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 600V 1,2 2SK2908-01L,S FAP-IIIB Series 9A 60W > Characteristics Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 120 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 100 80 IAV / IAVmax [%] 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is subject to change without notice! |
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